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Features:
• 184-pin, dual in-line memory module (DIMM)
• Fast data transfer rates: PC3200
• CAS Latency 3
• Utilizes 400 MT/s DDR SDRAM components
• 1GB (128 Meg x 64)
• VDD = VDDQ = +2.6V
• VDDSPD = +2.3V to +3.6V
• 2.6V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/received with data—i.e., source-synchronous data capture
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes
• 7.8125µs maximum average periodic refresh interval
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
• Gold edge contacts
• Lifetime Warranty
• 184-pin, dual in-line memory module (DIMM)
• Fast data transfer rates: PC3200
• CAS Latency 3
• Utilizes 400 MT/s DDR SDRAM components
• 1GB (128 Meg x 64)
• VDD = VDDQ = +2.6V
• VDDSPD = +2.3V to +3.6V
• 2.6V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/received with data—i.e., source-synchronous data capture
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes
• 7.8125µs maximum average periodic refresh interval
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
• Gold edge contacts
• Lifetime Warranty



